71812 tkim/o3103 tsim ta-100149 no.7491-1/7 http://onsemi.com semiconductor components industries, llc, 2013 august, 2013 50a02ss bipolar transistor ? 50v, ? 0.4a, low v ce ( sat ) pnp single ssfp stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. applications ? low-frequency ampli er, high-speed switching small motor drive, muting circuit features ? large current capacity ? low collector-to-emitter saturation voltage (resistance) : r ce (sat) typ=210m [i c =0.5a, i b =50ma] ? ultrasmall package facilitates miniaturization in end products ? small on-resistance (ron) speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo --50 v collector-to-emitter voltage v ceo --50 v emitter-to-base voltage v ebo -- 5 v collector current i c --400 ma collector current (pulse) i cp --800 ma collector dissipation p c mounted on a glass epoxy board (20 30 1.6mm) 200 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7029a-002 ordering number : EN7491A product & package information ? package : ssfp ? jeita, jedec : sc-81 ? minimum packing quantity : 8,000 pcs./reel packing type: tl marking electrical connection tl xn lot no. lot no. 3 2 1 1 : base 2 : emitter 3 : collector ssfp 1 3 12 2 3 1.4 1.4 0.3 0.3 0.8 0.6 0.07 0.07 0 to 0.02 0.25 0.2 0.45 0.1 50a02ss-tl-e
50a02ss no.7491-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb = --40v, i e =0a --100 na emitter cutoff current i ebo v eb = --4v, i c =0a --100 na dc current gain h fe v ce = --2v, i c = --10ma 200 500 gain-bandwidth product f t v ce = --10v, i c = --50ma 690 mhz output capacitance cob v cb = --10v, f=1mhz 3.8 pf collector-to-emitter saturation voltage v ce (sat) i c = --100ma, i b = --10ma --60 --120 mv base-to-emitter saturation voltage v be (sat) i c = --100ma, i b = --10ma --0.9 --1.2 v collector-to-base breakdown voltage v (br)cbo i c = --10 a, i e =0a --50 v collector-to-emitter breakdown voltage v (br)ceo i c = --1ma, r be = --50 v emitter-to-base breakdown voltage v (br)ebo i e = --10 a, i c =0a --5 v turn-on time t on see speci ed test circuit. 30 ns storage time t stg 170 ns fall time t f 30 ns switching time test circuit ordering information device package shipping memo 50a02ss-tl-e ssfp 8,000pcs./reel pb free v r r b v cc = --25v v be =5v ++ 50 input outpu t r l 220 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =20i b1 = --20i b2 = --200ma
50a02ss no.7491-3/7 collector-to-emitter voltage, v ce -- mv collector current, i c -- ma base-to-emitter voltage, v be -- v collector current, i c -- ma collector current, i c -- ma dc current gain, h fe 0 0 --100 --50 i c -- v ce it05118 it05119 --200 --150 --300 --250 --500 --450 --400 --350 --200 --600 --400 --800 --1000 --100 --500 --300 --700 --900 0 0 i c -- v be --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --200 --600 --500 --400 --300 --100 i b =0 ta=75 c 25 c --25 c --200 a --1ma --500 a --2ma --5ma --10ma --15ma --50ma --30ma --20ma --25ma v ce = --2v --40ma it05120 3 100 h fe -- i c --1.0 2 3 5 7 --10 2 3 5 7 2 3 5 7 --100 --1000 2 3 5 1000 7 5 7 ta=75 c 25 c --25 c v ce = --2v it05410 --1.0 23 57 --10 23 57 23 57 --100 --100 2 2 3 5 7 3 --10 ta=75 c --25 c 25 c i c / i b =10 v ce (sat) -- i c collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector current, i c -- ma collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv base-to-emitter saturation voltage, v be (sat) -- v it05122 --1.0 1.0 cob -- v cb --10 2 3 5 7 2 3 5 7 --100 2 3 5 7 10 f=1mhz it05124 v ce (sat) -- i c it05125 v be (sat) -- i c --1.0 23 57 --10 23 57 23 57 --100 --1000 3 --1000 2 3 5 7 2 3 5 7 2 --100 --10 i c / i b =50 ta=75 c - -25 c 25 c 2 --1.0 3 5 7 2 --1.0 23 57 --10 23 57 23 57 --100 --1000 ta= --25 c 75 c 25 c i c / i b =20 it05123 v ce (sat) -- i c --1.0 23 57 --10 23 57 23 57 --100 --1000 --1000 --100 2 3 5 7 2 3 5 7 --10 7 ta=75 c --25 c 25 c i c / i b =20 collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv
50a02ss no.7491-4/7 0 0 50 it05045 100 200 150 250 40 20 100 120 60 80 140 160 collector dissipation, p c -- m w ambient temperature, ta -- c p c -- ta mounted on a glass epoxy board(20 ? 30 ? 1.6mm) collector current, i c -- ma gain-bandwidth product, f t -- mhz it05121 --1.0 f t -- i c 2 3 57 2 3 57 2 3 57 --10 --100 --1000 100 1000 5 7 2 3 v ce = --10v f=1mhz --0.1 0.1 base current, i b -- m a ron -- i b on resistance, ron -- it06093 7 5 3 2 10 7 5 3 2 7 5 3 2 1.0 100 3 2 57 3 2 57 --1.0 --10 out in 1k 1k i b
50a02ss no.7491-5/7 embossed taping speci cation 50a02ss-tl-e
50a02ss no.7491-6/7 outline drawing land pattern example 50a02ss-tl-e mass (g) unit 0.0018 * for reference mm unit: mm 0.5 0.5 0.45 0.45 0.45 0.45 1.2
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